Manufacturer Part Number
FJV3114RMTF
Manufacturer
onsemi
Introduction
The FJV3114RMTF is a pre-biased NPN bipolar junction transistor (BJT) from onsemi, suitable for a wide range of analog and digital circuit applications.
Product Features and Performance
200 mW maximum power dissipation
50 V maximum collector-emitter breakdown voltage
100 mA maximum collector current
100 nA maximum collector cutoff current
300 mV maximum collector-emitter saturation voltage at 10 mA collector current
68 minimum DC current gain at 5 mA collector current
250 MHz transition frequency
7 kOhm base resistor and 47 kOhm emitter-base resistor
Product Advantages
Pre-biased design for simplified circuit design
Robust performance in a small surface-mount package
Suitable for a wide range of analog and digital circuit applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 100 nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300 mV @ 500 A, 10 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5 mA, 5 V
Frequency Transition: 250 MHz
Resistor Base (R1): 4.7 kOhms
Resistor Emitter Base (R2): 47 kOhms
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering in Tape and Reel packaging
Compatibility
Compatible with a wide range of analog and digital circuit applications
Application Areas
Analog and digital circuits
Amplifier circuits
Switching circuits
Logic gates
General-purpose electronics
Product Lifecycle
Not nearing discontinuation
Replacements and upgrades available from onsemi
Key Reasons to Choose This Product
Pre-biased design for simplified circuit design
Robust performance in a compact surface-mount package
Wide range of applications in analog and digital circuits
RoHS3 compliance for environmental safety
Availability of replacements and upgrades from onsemi
