Manufacturer Part Number
FJV1845FMTF
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) - Single
Product Features and Performance
RoHS3 Compliant
Surface Mount Packaging (SOT-23-3)
High Power Handling Capability (300 mW)
High Breakdown Voltage (120 V)
High Collector Current (50 mA)
Low Collector Cutoff Current (50 nA)
Low Collector-Emitter Saturation Voltage (300 mV)
High DC Current Gain (300)
High Transition Frequency (110 MHz)
Product Advantages
Compact Surface Mount Package
High Power and Voltage Handling
High Switching Speed
Reliable and Stable Performance
Key Technical Parameters
Operating Temperature: 150°C (TJ)
Power Rating: 300 mW
Collector-Emitter Breakdown Voltage: 120 V
Collector Current: 50 mA
Collector Cutoff Current: 50 nA
Collector-Emitter Saturation Voltage: 300 mV
DC Current Gain: 300
Transition Frequency: 110 MHz
Quality and Safety Features
RoHS3 Compliant
Reliable and Stable Performance
Suitable for Safety-Critical Applications
Compatibility
Compatible with various electronic circuit designs and applications requiring a high-performance NPN bipolar junction transistor.
Application Areas
Amplifiers
Switches
Logic Gates
Power Supply Circuits
Audio/Video Equipment
Industrial Control Systems
Product Lifecycle
Currently available and in production
No discontinuation or end-of-life plans announced
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High power and voltage handling capabilities
Compact surface mount package
Fast switching speed and high transition frequency
Reliable and stable performance
RoHS3 compliance for use in safety-critical applications
Compatibility with a wide range of electronic circuit designs
FJV3106RMTFonsemiTRANS PREBIAS NPN 200MW SOT23-3