Manufacturer Part Number
FJV1845FMTF
Manufacturer
onsemi
Introduction
High-voltage, high-gain NPN bipolar junction transistor (BJT) in a small SOT-23-3 package
Product Features and Performance
High voltage operation up to 120V
High current capability up to 50mA
High current gain up to 300
High transition frequency up to 110MHz
Low collector-emitter saturation voltage of 300mV @ 10mA
Low collector cutoff current of 50nA
Suitable for switching and amplifier applications
Product Advantages
Compact and space-saving SOT-23-3 package
High performance in a small footprint
Excellent electrical characteristics for a wide range of applications
RoHS compliant for environmentally-friendly use
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 120V
Current Collector (Ic) (Max): 50mA
Current Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Frequency Transition: 110MHz
Quality and Safety Features
Manufactured according to RoHS3 compliance
Reliable performance and quality assurance
Compatibility
Surface mount SOT-23-3 package
Suitable for a variety of circuit designs and applications
Application Areas
Switching and amplifier circuits
Power supply and control circuits
Automotive electronics
Industrial electronics
Consumer electronics
Product Lifecycle
Active and available for purchase
No plans for discontinuation at this time
Replacement or upgrade options may be available in the future
Several Key Reasons to Choose This Product
High voltage and current handling capability
Excellent electrical performance in a compact package
Reliable and RoHS-compliant manufacturing
Versatile compatibility and application areas
Ongoing product availability and potential for future replacements
