FGL60N100BNTDTU - onsemi

Manufacturer Part Number

FGL60N100BNTDTU

Manufacturer

onsemi

Introduction

High-performance IGBT (Insulated Gate Bipolar Transistor) device

Product Features and Performance

Optimized for high-power, high-frequency switching applications

Utilizes NPT (Non-Punch-Through) and Trench IGBT technologies

High current capability up to 60A

High voltage rating up to 1000V

Fast switching speed with low on-state voltage drop

Low gate charge for efficient driving

Product Advantages

Excellent switching characteristics

High power density

Robust and reliable performance

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 1000V

Current Collector (Ic) (Max): 60A

Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A

Reverse Recovery Time (trr): 1.2μs

Gate Charge: 275nC

Current Collector Pulsed (Icm): 120A

Td (on/off) @ 25°C: 140ns/630ns

Quality and Safety Features

RoHS3 compliant

Operating temperature range: -55°C to 150°C

Compatibility

Through-hole mounting (TO-264-3, TO-264AA)

Application Areas

High-power, high-frequency switching applications

Power supplies

Motor drives

Inverters

UPS systems

Welding equipment

Industrial and consumer electronics

Product Lifecycle

Current product, no signs of discontinuation

Replacement or upgrade options available from the manufacturer

Several Key Reasons to Choose This Product

Excellent switching performance and power handling capability

Robust and reliable design for demanding applications

Efficient and cost-effective solution for high-power, high-frequency switching needs

Compatibility with standard through-hole mounting footprint

Supported by the reputable onsemi brand and customer service