FGL40N120ANTU - onsemi

Manufacturer Part Number

FGL40N120ANTU

Manufacturer

onsemi

Introduction

High performance IGBT (Insulated Gate Bipolar Transistor) device for industrial and traction applications

Product Features and Performance

NPT (Non-Punch Through) IGBT structure

Low conduction and switching losses

High speed switching

High current and voltage handling capability

Optimized for high frequency applications

Product Advantages

Excellent thermal performance

Robust and reliable design

Optimized for high efficiency power conversion

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 1200 V

Current Collector (Ic) (Max): 64 A

Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A

Gate Charge: 220 nC

Current Collector Pulsed (Icm): 160 A

Switching Energy: 2.3mJ (on), 1.1mJ (off)

Td (on/off) @ 25°C: 15ns/110ns

Quality and Safety Features

RoHS3 Compliant

Suitable for high-reliability applications

Compatibility

Mounting Type: Through Hole

Package: TO-264-3, TO-264AA

Application Areas

Industrial motor drives

Power supplies

Welding equipment

Traction applications

Induction heating

Uninterruptible power supplies (UPS)

Product Lifecycle

This product is currently in production and widely available.

Replacements or upgrades may be available in the future as technology advances.

Several Key Reasons to Choose This Product

High efficiency and low losses for improved system performance

Robust and reliable design for long-term operation

Optimized for high frequency and high power applications

Excellent thermal performance for improved reliability

Broad range of industrial and traction application suitability