Manufacturer Part Number
FGL40N150DTU
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, high-power IGBT (Insulated Gate Bipolar Transistor) device for industrial and power electronics applications.
Product Features and Performance
High voltage rating up to 1500V
High current handling capability up to 40A
Low on-state resistance for high efficiency
Fast switching speed with low gate charge
Wide operating temperature range from -55°C to 150°C
High power density and rugged design
Product Advantages
Excellent performance for high-power industrial applications
Efficient power conversion and control
Reliable and durable operation
Easy to integrate into power systems
Key Technical Parameters
Collector-Emitter Breakdown Voltage (BVCES): 1500V
Collector Current (IC): 40A
On-state Voltage Drop (VCE(on)): 4.5V @ 15V, 40A
Reverse Recovery Time (trr): 170ns
Gate Charge (Qg): 170nC
Pulsed Collector Current (ICM): 120A
Quality and Safety Features
RoHS3 compliant
Robust TO-264-3 or TO-264AA package
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of industrial and power electronics applications
Application Areas
Motor drives
Power supplies
Welding equipment
Induction heating systems
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may become available in the future as technology advances
Key Reasons to Choose This Product
High voltage and current handling capability
Excellent efficiency and switching performance
Reliable and durable operation across wide temperature range
Easy integration into power electronics systems
Compliance with RoHS3 environmental regulations
Proven track record and support from Fairchild (onsemi)
FGL9705042186-A87-ARenesas Electronics Corporation
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