FGL40N120ANTU - Fairchild Semiconductor

Manufacturer Part Number

FGL40N120ANTU

Manufacturer

Fairchild (onsemi)

Introduction

High-performance Insulated Gate Bipolar Transistor (IGBT) suitable for a wide range of industrial and power conversion applications.

Product Features and Performance

High power density and efficiency

Low on-state voltage drop

Fast switching speed

High short-circuit ruggedness

Wide safe operating area

Robust and reliable design

Product Advantages

Optimized for high-frequency, high-efficiency power conversion

Excellent thermal performance and reliability

Compact and high-power density design

Suitable for a variety of industrial and power applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 1200 V

Current Collector (Ic) (Max): 64 A

Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A

Gate Charge: 220 nC

Current Collector Pulsed (Icm): 160 A

Switching Energy: 2.3mJ (on), 1.1mJ (off)

Td (on/off) @ 25°C: 15ns/110ns

Quality and Safety Features

Robust and reliable design

Meets industrial safety and quality standards

Compatibility

Suitable for a wide range of industrial and power conversion applications

Application Areas

Industrial motor drives

Power supplies

Welding equipment

Induction heating

Solar inverters

UPS systems

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Several Key Reasons to Choose This Product

High power density and efficiency for optimized power conversion

Fast switching speed and low switching losses for high-frequency operation

Excellent thermal performance and reliability for industrial applications

Compact and high-power density design for space-constrained environments

Suitable for a wide range of industrial and power conversion applications