Manufacturer Part Number
FDMC86139P
Manufacturer
onsemi
Introduction
High-performance P-channel power MOSFET transistor
Product Features and Performance
100V drain-source voltage
67mΩ maximum on-resistance
4A continuous drain current at 25°C
15A continuous drain current at case temperature
-55°C to 150°C operating temperature range
Low gate charge of 22nC at 10V
Product Advantages
Optimized for high-efficiency power conversion
Excellent thermal performance
Compact 8-MLP (3.3x3.3) package
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs Max): ±25V
On-Resistance (Rds(on) Max): 67mΩ
Drain Current (Id): 4.4A (Ta), 15A (Tc)
Input Capacitance (Ciss Max): 1335pF
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of power electronic circuits and systems
Application Areas
Switch-mode power supplies
DC-DC converters
Motor drives
Industrial and automotive electronics
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from onsemi
Key Reasons to Choose This Product
Excellent performance and efficiency for power conversion applications
Compact, thermally efficient package
Wide operating temperature range
Robust and reliable design for high-reliability systems
