Manufacturer Part Number
FDMC86102
Manufacturer
onsemi
Introduction
The FDMC86102 is a high-performance N-channel power MOSFET from onsemi, designed for various power management and control applications.
Product Features and Performance
100V drain-to-source voltage (Vdss)
24mΩ maximum on-resistance (Rds(on)) at 7A, 10V
7A continuous drain current (Id) at 25°C
20A continuous drain current (Id) at case temperature (Tc)
965pF maximum input capacitance (Ciss) at 50V
3W power dissipation at 25°C ambient temperature (Ta)
41W power dissipation at case temperature (Tc)
-55°C to 150°C operating temperature range
Product Advantages
High efficiency due to low on-resistance
Compact surface mount package
Suitable for high-current, high-voltage power applications
Robust design for reliable performance
Key Technical Parameters
N-channel MOSFET
±20V maximum gate-to-source voltage (Vgs)
4V maximum gate threshold voltage (Vgs(th)) at 250μA
6V to 10V drive voltage range
Quality and Safety Features
RoHS3 compliant
Housed in a Power33 package
Compatibility
Surface mount package suitable for automated assembly
Application Areas
Power management and control
Motor drives
Switch-mode power supplies
Industrial and consumer electronics
Product Lifecycle
The FDMC86102 is an active product and not nearing discontinuation. Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
High performance with low on-resistance
Compact and efficient surface mount package
Suitable for a wide range of high-current, high-voltage power applications
Robust design for reliable operation
RoHS3 compliance for environmental compatibility
