Manufacturer Part Number
FDMC86012
Manufacturer
onsemi
Introduction
The FDMC86012 is a high-performance N-Channel MOSFET transistor designed for a wide range of power management and control applications.
Product Features and Performance
Low on-resistance (RDS(on)) of 2.7 mΩ at 23A and 4.5V
High current capability of 23A continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 5075 pF at 15V
Fast switching speed and low gate charge (Qg) of 38 nC at 4.5V
Product Advantages
Excellent performance in power conversion and control applications
Efficient power management with low conduction losses
Suitable for a wide range of operating conditions
Key Technical Parameters
Drain to Source Voltage (VDS): 30V
Gate to Source Voltage (VGS): ±12V
Power Dissipation (Pd): 2.3W (Ta), 54W (Tc)
Threshold Voltage (VGS(th)): 1.5V at 250A
Quality and Safety Features
Compliant with RoHS3 directive
Manufactured in a certified and controlled environment
Compatibility
The FDMC86012 is compatible with a wide range of power management and control applications.
Application Areas
Power supplies
Motor drives
Switching regulators
Battery chargers
Automotive electronics
Product Lifecycle
The FDMC86012 is an active product, and there are no plans for discontinuation. Replacement or upgrade options are available if required.
Key Reasons to Choose This Product
Excellent performance in power conversion and control applications
Efficient power management with low conduction losses
Wide operating temperature range and fast switching speed
Suitable for a variety of power management and control applications
Available in a compact and easy-to-use package
FDMC8554 MOSFairchild (onsemi)