Manufacturer Part Number
FDMC8554
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET transistor
Product Features and Performance
Optimized for high-frequency, high-efficiency power conversion applications
Low on-resistance for high efficiency
Fast switching speed
High power density
Product Advantages
Excellent thermal performance
Robust avalanche capability
Reliable and durable
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 5mOhm @ 16.5A, 10V
Current Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 10 V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of power conversion applications
Application Areas
Switching power supplies
Motor drives
Inverters
Class-D audio amplifiers
Power tools
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacements and upgrades may be available in the future as technology evolves.
Several Key Reasons to Choose This Product
Excellent thermal performance and high power density for efficient power conversion
Fast switching speed and low on-resistance for high efficiency
Robust avalanche capability and reliable construction for long-term durability
Suitable for a wide range of power conversion applications
