Manufacturer Part Number
FDMC86244
Manufacturer
onsemi
Introduction
High-performance N-Channel MOSFET transistor designed for a wide range of power management and switching applications.
Product Features and Performance
Capable of handling up to 150V drain-source voltage
Low on-resistance of 134mOhm @ 2.8A, 10V
Continuous drain current of 2.8A at 25°C ambient temperature
Maximum junction temperature of 150°C
Fast switching speed and low gate charge of 5.9nC @ 10V
Product Advantages
Efficient power management with low conduction losses
Suitable for high-voltage and high-current applications
Compact 8-MLP (3.3x3.3) package for space-constrained designs
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain to Source Voltage (Vdss): 150V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 134mOhm @ 2.8A, 10V
Drain Current (Id): 2.8A (Ta), 9.4A (Tc)
Input Capacitance (Ciss): 345pF @ 75V
Power Dissipation: 2.3W (Ta), 26W (Tc)
Quality and Safety Features
RoHS3 compliant
Designed and tested to meet industry reliability standards
Compatibility
Suitable for a wide range of power management and switching applications
Can be used in various electronic devices and systems
Application Areas
Power supplies
Motor drives
Lighting controls
Industrial automation
Telecommunications equipment
Automotive electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgraded models may become available in the future
Reasons to Choose This Product
Exceptional performance in high-voltage, high-current applications
Efficient power management with low conduction losses
Compact package for space-constrained designs
Wide operating temperature range for diverse environments
Reliable and RoHS3 compliant for quality assurance
FDMC86160 MOSFairchild (onsemi)