Manufacturer Part Number
FDMC86259P
Manufacturer
onsemi
Introduction
The FDMC86259P is a single P-Channel MOSFET transistor manufactured by onsemi.
Product Features and Performance
High-performance P-Channel MOSFET
Low on-resistance of 107 mΩ at 3 A and 10 V
High drain current capability of 3.2 A at 25°C
High voltage rating of 150 V drain-to-source
Wide operating temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for reduced power losses
High current and voltage handling capability
Compact PowerWDFN package for space-efficient designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 150 V
Gate-to-Source Voltage (Vgs): ±25 V
Continuous Drain Current (Id): 3.2 A at 25°C, 13 A at 105°C
On-Resistance (Rds(on)): 107 mΩ at 3 A, 10 V
Input Capacitance (Ciss): 2045 pF at 75 V
Power Dissipation: 2.3 W at 25°C, 62 W at 105°C
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Compatible with various electronic circuits and systems that require a high-performance P-Channel MOSFET
Application Areas
Power management circuits
Motor control
Battery charging and power supply systems
Automotive electronics
Product Lifecycle
The FDMC86259P is an active product and is not nearing discontinuation.
Replacement or upgrade options may be available from onsemi or other manufacturers.
Several Key Reasons to Choose This Product
Low on-resistance for improved efficiency and reduced power losses
High current and voltage handling capability for a wide range of applications
Compact PowerWDFN package for space-constrained designs
Wide operating temperature range for reliable performance in diverse environments
RoHS3 compliance and AEC-Q101 qualification for use in safety-critical applications
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