Manufacturer Part Number
FDMC86261P
Manufacturer
onsemi
Introduction
This product is a single P-channel MOSFET transistor from onsemi's PowerTrench series, designed for surface mount applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 150V
Maximum Gate-Source Voltage (Vgs) of ±25V
On-State Resistance (Rds(on)) of 160mΩ @ 2.4A, 10V
Continuous Drain Current (Id) of 2.7A (Ta), 9A (Tc)
Input Capacitance (Ciss) of 1360pF @ 75V
Maximum Power Dissipation of 2.3W (Ta), 40W (Tc)
Operating Temperature range of -55°C to 150°C
Product Advantages
Efficient power handling due to low on-state resistance
Robust design with high voltage and current capabilities
Compact 8-MLP (3.3x3.3) surface mount package
Key Technical Parameters
MOSFET technology
P-channel FET type
Threshold Voltage (Vgs(th)) of 4V @ 250A
Gate Drive Voltage of 6V (max Rds(on)), 10V (min Rds(on))
Gate Charge (Qg) of 24nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
This MOSFET is suitable for a wide range of power management and control applications.
Application Areas
Power supplies
Motor drives
Lighting controls
Battery management systems
Industrial automation
Product Lifecycle
The FDMC86261P is an active product, with no indication of discontinuation. Replacements or upgrades may become available in the future as technology advances.
Key Reasons to Choose This Product
Excellent power handling capabilities with low on-state resistance
Compact and efficient surface mount package
Robust design with high voltage and current ratings
Suitable for a wide range of power management applications
RoHS3 compliance for environmentally-friendly use
