Manufacturer Part Number
FDMC86160ET100
Manufacturer
onsemi
Introduction
N-Channel MOSFET transistor in a PowerWDFN package
Product Features and Performance
Wide operating temperature range: -55°C to 175°C
High drain-to-source voltage: 100V
Low on-resistance: 14mΩ @ 9A, 10V
High continuous drain current: 9A (Ta), 43A (Tc)
Low input capacitance: 1290pF @ 50V
High power dissipation: 2.8W (Ta), 65W (Tc)
Product Advantages
Compact PowerWDFN package for space-saving design
High power handling capability
Excellent thermal performance
Suitable for a wide range of applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs Max): ±20V
On-Resistance (Rds(on) Max): 14mΩ @ 9A, 10V
Continuous Drain Current (Id): 9A (Ta), 43A (Tc)
Input Capacitance (Ciss Max): 1290pF @ 50V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power supplies
Motor drives
Lighting control
Industrial automation
Automotive electronics
Product Lifecycle
This product is currently in production and no discontinuation or replacement is planned.
Key Reasons to Choose This Product
Excellent power handling and thermal performance
Compact and space-saving PowerWDFN package
Wide operating temperature range
Suitable for a variety of power management applications
Reliable and RoHS3 compliant
FDMC8622 MOSFairchild (onsemi)