2SC3647T-TD-E - onsemi

Manufacturer Part Number

2SC3647T-TD-E

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT)

Single Transistor

Product Features and Performance

500 mW Power Capability

100 V Collector-Emitter Breakdown Voltage

2 A Collector Current (Max)

100 nA Collector Cutoff Current (Max)

400 mV Collector-Emitter Saturation Voltage (Max)

100 DC Current Gain (Min)

120 MHz Transition Frequency

Product Advantages

High power and voltage handling capabilities

Low saturation voltage for efficient operation

Wide operating temperature range up to 150°C

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 100 V

Current Collector (Ic) (Max): 2 A

Current Collector Cutoff (Max): 100 nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 400 mV @ 100 mA, 1 A

DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100 mA, 5 V

Frequency Transition: 120 MHz

Quality and Safety Features

RoHS3 Compliant

Reliable surface mount package (TO-243AA)

Compatibility

Suitable for a wide range of electronic circuit designs

Application Areas

Amplifier circuits

Switching circuits

Power management applications

Product Lifecycle

Current production product

Replacement and upgrade options available

Several Key Reasons to Choose This Product

High power and voltage handling capabilities

Efficient operation with low saturation voltage

Wide operating temperature range

Reliable surface mount package

Suitable for a variety of electronic circuit applications