Manufacturer Part Number
2SC3646T-TD-E
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
TO-243AA Package
Tape & Reel (TR) Packaging
Operating Temperature: 150°C (TJ)
Power Rating: 500 mW
Collector-Emitter Breakdown Voltage (Max): 100 V
Collector Current (Max): 1 A
Collector Cutoff Current (Max): 100 nA (ICBO)
Collector-Emitter Saturation Voltage (Max): 400 mV @ 40 mA, 400 mA
DC Current Gain (hFE) (Min): 100 @ 100 mA, 5 V
Transition Frequency: 120 MHz
Product Advantages
Compact surface mount package
High power and voltage ratings
Low collector saturation voltage
High current gain
High transition frequency
Key Technical Parameters
Package: TO-243AA
Transistor Type: NPN
Power Rating: 500 mW
Breakdown Voltage: 100 V
Collector Current: 1 A
DC Current Gain: 100 (Min)
Transition Frequency: 120 MHz
Quality and Safety Features
RoHS3 Compliant
Reliable operation up to 150°C
Compatibility
Compatible with a wide range of electronic circuits and designs
Application Areas
Power amplifiers
Switches
Drivers
General-purpose amplification
Product Lifecycle
This product is currently in production and readily available.
No discontinuation or replacement plans announced.
Key Reasons to Choose This Product
High power and voltage ratings for demanding applications
Compact surface mount package for space-constrained designs
Excellent DC current gain and high transition frequency for high-speed performance
RoHS3 compliance for use in environmentally-conscious applications
Reliable operation across a wide temperature range