2SC3646S-TD-E - onsemi

Manufacturer Part Number

2SC3646S-TD-E

Manufacturer

onsemi

Introduction

The 2SC3646S-TD-E is a discrete NPN bipolar junction transistor (BJT) from onsemi.

Product Features and Performance

High current and power handling capabilities

High frequency operation up to 120 MHz

Wide collector-emitter voltage range of up to 100V

Low collector-emitter saturation voltage of 400 mV at 400 mA collector current

High DC current gain of at least 100 at 100 mA collector current

Product Advantages

Suitable for a variety of amplifier, switching, and control applications

Reliable and robust performance

Compact surface mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 100V

Collector Current (Max): 1A

Power Dissipation (Max): 500 mW

Operating Temperature Range: -55°C to +150°C

Quality and Safety Features

RoHS3 compliant

Packaged in a PCP surface mount package

Compatibility

Can be used as a replacement or upgrade for similar NPN BJT transistors in various electronic circuits and applications.

Application Areas

Amplifiers

Switches

Power control circuits

Industrial electronics

Consumer electronics

Product Lifecycle

This product is currently in active production and is not nearing discontinuation.

Replacement or upgraded products may become available in the future as technology evolves.

Several Key Reasons to Choose This Product

High performance and reliability

Wide operating voltage and current range

Compact and efficient surface mount package

RoHS3 compliance for environmentally-friendly use

Suitable for a variety of electronic circuit applications