Manufacturer Part Number
2SC3649S-TD-E
Manufacturer
onsemi
Introduction
The 2SC3649S-TD-E is a high-performance NPN bipolar junction transistor (BJT) suitable for a variety of power amplifier and switching applications.
Product Features and Performance
Capable of handling up to 500 mW of power
High collector-emitter breakdown voltage of 160 V
Maximum collector current of 1.5 A
Transition frequency of 120 MHz
Excellent DC current gain of at least 100 at 100 mA, 5 V
Low collector-emitter saturation voltage of 450 mV at 50 mA, 500 mA
Product Advantages
Robust and reliable performance
Suitable for high-voltage, high-current applications
Fast switching capabilities
Space-efficient surface mount package
Key Technical Parameters
Power Rating: 500 mW
Collector-Emitter Breakdown Voltage: 160 V
Collector Current (Max): 1.5 A
DC Current Gain: 100 (min) @ 100 mA, 5 V
Transition Frequency: 120 MHz
Quality and Safety Features
Compliant with RoHS3 environmental standards
Packaged in a reliable PCP (Plated Copper Frame) package
Compatibility
Suitable for use in a wide range of power amplifier, switching, and control circuit applications
Application Areas
Power amplifiers
Switching circuits
Motor control
Industrial electronics
Automotive electronics
Product Lifecycle
This product is an active and widely available component from onsemi.
Replacement or upgrade options are readily available if needed.
Key Reasons to Choose This Product
High power handling capability
Excellent high-voltage and high-current performance
Fast switching speed for efficient operation
Robust and reliable design in a compact surface mount package
RoHS3 compliance for environmentally-friendly use
Broad compatibility and application potential
