Manufacturer Part Number
2SC3648T-TD-E
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
Manufacturer's Packaging: PCP
Package: TO-243AA, Tape & Reel (TR)
Operating Temperature: 150°C (TJ)
Power Rating: 500 mW
Collector-Emitter Breakdown Voltage: 160 V
Collector Current: 700 mA
Collector Cutoff Current: 100 nA (ICBO)
Collector-Emitter Saturation Voltage: 400 mV @ 25 mA, 250 mA
Transistor Type: NPN
DC Current Gain (hFE): 100 @ 100 mA, 5 V
Transition Frequency: 120 MHz
Surface Mount Mounting Type
Product Advantages
RoHS3 Compliant
High operating temperature capability
High breakdown voltage
High collector current capability
Low collector cutoff current
Suitable for high-frequency applications
Key Technical Parameters
Power Rating: 500 mW
Collector-Emitter Breakdown Voltage: 160 V
Collector Current: 700 mA
Transition Frequency: 120 MHz
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a wide range of electronic circuit applications
Application Areas
Suitable for high-frequency, high-power, and high-voltage electronic circuit applications
Product Lifecycle
Current product, no information on discontinuation or availability of replacements/upgrades
Several Key Reasons to Choose This Product
RoHS3 Compliant
High operating temperature capability
High breakdown voltage
High collector current capability
Low collector cutoff current
Suitable for high-frequency applications
2SC3647T-TD-EonsemiTRANS NPN 100V 2A PCP