The BCP56 signifies a category of low-frequency power amplifier transistors utilizing silicon epitaxial NPN technology, primarily crafted for precision within audio applications. Housed in a SOT−223 package, it optimally supports medium power surface installations, offering enhanced compatibility alongside improved thermal performance in diverse configurations.
Capable of sustaining a collector-emitter voltage (Vceo) of up to 80V. Withstands a collector-base voltage (Vcbo) of 100V. Supports a base-emitter voltage (Vbeo) of 5V. Handles current reaching up to 1A. The DC gain (Hfe) ranges from 25 to 250, signifying its aptitude for providing efficient amplification tailored to various operational requirements. Additionally, the typical current gain bandwidth product (ft) set at 50 MHz ensures dependable function within moderate-frequency circuits. The architectural design of the BCP56, specified by its two N-type semiconductors flanking a P-type semiconductor, facilitates solid current amplification and switching operations. These elements serve major roles within complex electronic circuits.
Feature |
Description |
High Current |
1.0 A |
Package Type |
SOT-223; can be soldered using wave or reflow. Formed
leads absorb thermal stress during soldering, eliminating the possibility of
damage to the die. |
Tape and Reel Availability |
Available in 12 mm tape and reel |
- Use BCP56T1G for 7 inch/1000 unit reel |
|
- Use BCP56T3G for 13 inch/4000 unit reel |
|
PNP Complement |
BCP53T1G |
Automotive and Special Applications |
S and NSV prefix for automotive applications requiring
unique site and control change requirements; AEC-Q101 qualified and PPAP
capable |
Environmental Compliance |
Pb-Free, Halogen Free/BFR Free, and RoHS compliant |
Here is the table format for the ON Semiconductor BCP56T1G specifications.
Specification |
Detail |
Type |
Parameter |
Lifecycle Status |
ACTIVE (Last Updated: 2 days ago) |
Factory Lead Time |
8 Weeks |
Contact Plating |
Tin |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Surface Mount |
YES |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
80V |
Number of Elements |
1 |
hFE Min |
40 |
Operating Temperature |
-65°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2005 |
JESD-609 Code |
e3 |
Pbfree Code |
Yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
80V |
Max Power Dissipation |
1.5W |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
1A |
Frequency |
130MHz |
Base Part Number |
BCP56 |
Pin Count |
4 |
Element Configuration |
Single |
Power Dissipation |
1.5W |
Case Connection |
COLLECTOR |
Transistor Application |
AMPLIFIER |
Gain Bandwidth Product |
130MHz |
Polarity/Channel Type |
NPN |
Transistor Type |
NPN |
Collector Emitter Voltage (VCEO) |
80V |
Max Collector Current |
1A |
DC Current Gain (hFE) (Min) @ Ic, Vce |
40 @ 150mA 2V |
Current - Collector Cutoff (Max) |
100nA ICBO |
Vce Saturation (Max) @ Ib, Ic |
500mV @ 50mA, 500mA |
Transition Frequency |
130MHz |
Max Breakdown Voltage |
80V |
Collector Base Voltage (VCBO) |
100V |
Emitter Base Voltage (VEBO) |
5V |
Max Junction Temperature (Tj) |
150°C |
Height |
1.75mm |
Length |
6.5mm |
Width |
3.5mm |
REACH SVHC |
No SVHC |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Part Number |
Description |
Manufacturer |
BCP56E6327 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO,
1-Element, NPN, Silicon |
Siemens |
BCP56 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO,
1-Element, NPN, Silicon |
Siemens |
BCP56,135 |
TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose
Small Signal |
NXP Semiconductors |
BCP56E6433 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO,
1-Element, NPN, Silicon |
Siemens |
The BCP56 transistor holds a notable position in the realm of linear voltage regulators, adeptly managing output voltage with precision. This role becomes especially relevant in situations where sensitive electronic components must be shielded through meticulous voltage regulation. Integration of BCP56 in circuits highlights its smooth, low-noise output, which is valued for providing a stable power supply, even though its efficiency might slightly trail behind switching regulators.
In the domain of low-side switches, BCP56 excels at delivering efficient on-off control across a spectrum of loads. This flexibility manifests prominently in applications that call for low-cost, high-frequency switching. It simplifies circuit configurations, facilitating versatile management of components like motors and lamps, maintaining harmony between performance credentials and cost-effectiveness.
When it comes to battery-powered devices, BCP56 showcases its prowess in power management, instrumental in extending battery life while ensuring consistent performance. Portable gadgets and remote sensors benefit greatly from their efficient energy use, demonstrating the need to prioritize components that maintain functionality under diverse conditions while optimizing energy use.
BCP56 asserts its value in power management circuits tasked with adept power flow regulation, major for distributing power to various circuit sections. Practical examples demonstrate BCP56’s role in dynamically adjusting power distribution amidst multiple power rails, enhancing system efficiency, and reducing energy wastage.
As a MOSFET driver, the BCP56 aids in controlling more substantial power MOSFETs, major for managing heavy loads in applications like inverters and power supplies. It supports the effective switching of MOSFETs with sufficient gate drive power and minimal delay, proving instrumental in high-density power scenarios.
In audio amplification, BCP56's capacity to efficiently handle medium power makes it a preferred choice for driving loudspeakers and audio output segments. Its implementation is dominant in enhancing signal fidelity and reducing distortion, ensuring a superior auditory experience, used in audiophile-grade equipment where precision and clarity are dominant.
BCP56’s suitability extends to medium power surface-mount applications, where its compactness is an asset in tight-space designs. This aspect becomes mostly beneficial for design flexibility and integration in modern electronics, where its capability to manage considerable power within a small footprint is serious in developing next-gen devices, ranging from wearables to sophisticated communication gear.
ON Semiconductor, trading under the NASDAQ symbol ON is the producer of the BCP56. Their deep-seated commitment to energy efficiency runs through their wide array of power and signal management solutions. The company operates on a global platform, with manufacturing, sales, and design facilities thoughtfully positioned in North America, Europe, and the Asia-Pacific region. This geographic layout not only strengthens a reliable supply chain but also allows adaptation to varied market demands with finesse.
The calculated distribution of facilities transcends mere logistics and enhances their responsiveness to global demand. By maintaining strategic locations in key regions, ON Semiconductor capitalizes on local expertise and insights, nurturing innovation. This widespread presence assures the tailored adaptation of products to local needs, augmenting market reach and customer satisfaction.
Please send an inquiry, we will respond immediately.
on November 14th
on November 14th
on January 1th 3223
on January 1th 2784
on November 19th 2538
on January 1th 2239
on January 1th 1855
on January 1th 1826
on January 1th 1783
on January 1th 1766
on January 1th 1747
on November 19th 1743