BCP56T1G - onsemi

Manufacturer Part Number

BCP56T1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

Compliant with RoHS3 directive

TO-261 (SOT-223) package

Operating temperature range: -65°C to 150°C

Power rating: 1.5W

Collector-Emitter breakdown voltage: 80V

Collector current (max): 1A

Collector cutoff current (max): 100nA

Collector-Emitter saturation voltage: 500mV @ 50mA, 500mA

DC current gain (hFE): 40 min. @ 150mA, 2V

Transition frequency: 130MHz

Product Advantages

Compact surface mount package

Wide operating temperature range

High power and voltage handling capabilities

Suitable for various amplifier and switching applications

Key Technical Parameters

Transistor type: NPN

Package: TO-261-4, TO-261AA (SOT-223)

Packaging: Tape & Reel

Quality and Safety Features

RoHS3 compliant

Compatibility

Can be used in a wide range of electronic circuits and applications

Application Areas

Amplifiers

Switches

Power supplies

General-purpose electronics

Product Lifecycle

Currently available product

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

Compact surface mount package for space-constrained designs

Wide operating temperature range for versatile applications

High power and voltage handling capabilities for demanding circuits

Suitable for various amplifier and switching applications

RoHS3 compliance for environmentally-conscious designs