Manufacturer Part Number
BCP56T3G
Manufacturer
onsemi
Introduction
High voltage, high current NPN silicon transistor
Designed for use in power amplifier and switching applications
Product Features and Performance
Capable of handling up to 1.5W of power
Voltage rating of up to 80V
Collector current rating of up to 1A
Transition frequency of 130MHz
Low collector-emitter saturation voltage
Product Advantages
Robust and reliable performance
Suitable for high power switching and amplifier circuits
Compact SOT-223 surface mount package
Key Technical Parameters
Operating temperature range: -65°C to 150°C
Maximum collector-emitter breakdown voltage: 80V
Maximum collector current: 1A
Minimum DC current gain (hFE): 40 @ 150mA, 2V
Quality and Safety Features
RoHS3 compliant
Manufactured in accordance with strict quality standards
Compatibility
Suitable for a wide range of power electronics and amplifier applications
Application Areas
Power amplifiers
Switching circuits
Motor control
Industrial electronics
Product Lifecycle
This product is currently in production and readily available
No plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Reliable and robust performance
High power handling capability
Compact and efficient surface mount package
Proven track record in power electronics and amplifier applications