on November 20th 18

2N2369 Switching Transistor: Pinout, Alternatives, and Specifications

This article explores the 2N2369 transistor, known for its high-speed performance and reliability in switching electronics. We will examine its pin configuration, detailed specifications, and various applications. The discussion also includes alternative transistors and insights from manufacturers, enhancing our understanding of how the 2N2369 interacts with other electronic components and influences technological advancements.

Catalog

What is the 2N2369 Transistor?

The 2N2369 transistor is a silicon planar epitaxial NPN device admired for its capability to perform swift switching actions, featuring a low saturation voltage and effective turn-off dynamics. Its engineering makes it beneficial in contexts where conserving power and achieving rapid operation are sought after across a range of electronic circuits. A standout attribute of the 2N2369 transistor is its proficiency in executing high-speed switching. This feature finds its essence in applications such as pulse amplifiers, where brisk transitions between states inject vitality. The harmonious blend of speed and efficiency in a single component has presented an engineering puzzle, yet this transistor gracefully combines these traits.

The 2N2369's low saturation voltage curtails power wastage during operation, which fits seamlessly into systems that embrace energy efficiency. This trait facilitates prolonged device longevity and eases thermal stress within circuits, a boon often appreciated in practical deployments demanding energy sensitivity. The fast turn-off characteristic heightens the transistor's aptitude for high-frequency applications. By curbing the time it remains active when unnecessary, circuits can uphold formidable efficiency and performance. Comparable to advanced automobile braking systems that swiftly respond to driver commands. Balancing low power usage with stellar performance becomes a focal endeavor. The architectural finesse of the 2N2369 facilitates this, rendering it an excellent choice for portable electronics where battery longevity is a predominant concern. The rapid switching prowess of the 2N2369 is important within high-speed digital frameworks, such as signal processors and data converters.

The picture below shows the internal schematic diagram of an NPN transistor, depicting the connections between the base (B), collector (C), and emitter (E).

2N2369 Pin Configuration

2N2369 Symbol and Footprint

2N2369 Technical Specifications

Technical specifications, characteristics, and parameters of the Microsemi Corporation 2N2369A, along with components that share similar specifications.

Type	Parameter
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating	Lead, Tin
Mounting Type	Through Hole
Number of Pins	3
Collector-Emitter Breakdown Voltage	15V
Operating Temperature	-65°C~200°C TJ
Published	2002
Pbfree Code	no
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Max Power Dissipation	360mW
Terminal Form	WIRE
Configuration	SINGLE
Factory Lead Time	12 Weeks
Mount	Through Hole
Package / Case	TO-206AA, TO-18-3 Metal Can
Transistor Element Material	SILICON
Number of Elements	1
Packaging	Bulk
JESD-609 Code	e0
Part Status	Active
Number of Terminations	3
Terminal Finish	TIN LEAD
Terminal Position	BOTTOM
Pin Count	3
Power Dissipation	360mW
Case Connection	COLLECTOR
Polarity/Channel Type	NPN
Collector Emitter Voltage (VCEO)	15V
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 100mA 1V
Transition Frequency	500MHz
Emitter Base Voltage (VEBO)	4.5V
Collector-Base Capacitance-Max	4pF
RoHS Status	Non-RoHS Compliant
Transistor Application	SWITCHING
Transistor Type	NPN
Max Collector Current	400mA
Vce Saturation (Max) @ Ib, Ic	450mV @ 10mA, 100mA
Collector Base Voltage (VCBO)	40V
VCEsat-Max	0.45V
Radiation Hardening	No
Lead Free	Contains Lead

Features of the 2N2369

• Type: Bipolar NPN transistor, suitable for versatile applications.

• Max Collector Current: 200mA, supporting moderate electrical loads.

• Collector-Emitter Breakdown Voltage: 15V, ideal for low-to-moderate power projects.

• Saturation Voltage (Vce): 450mV, enabling energy-efficient switching.

• Applications: Used in signal amplification, small-motor control, and high-speed switching.

• Performance: Rapid response time improves circuit efficiency in fast-switching scenarios.

• Engineering Benefits: Balances theoretical specs with reliability for precision circuits.

• Flexibility: Adaptable for innovative designs in today's evolving technological landscape.

• Key Strengths: Efficiency, adaptability, and suitability for modern engineering challenges.

Applications of the 2N2369

High-Speed Switching

Renowned for its fast switching capabilities and low collector-emitter saturation voltage, the 2N2369 excels in high-speed switching contexts. It acts as a seamless interface between low-power actuators and control circuits. This transition provides consistent reliability for time-sensitive tasks, enhancing system robustness. Such dependability is highly valued in both commercial and industrial settings.

Signal Amplification

The 2N2369 is a preferred component in audio and RF circuits demanding low noise amplification. Its use in amplifiers elevates sound clarity and signal fidelity. Others rely on this transistor to maintain signal integrity over distances, achieving a delicate balance between specifications and practical use. This reflects ongoing advancements in audio and communication technologies, where clarity holds importance.

Applications in Digital and Analog Systems

The 2N2369 is widely integrated into modern digital and analog systems due to its capacity to manage diverse current and voltage levels. It's a important component in complex systems like digital signal processors and microcontrollers. These components, engineered with precision, allow systems to perform calculations both swiftly and accurately. Incremental improvements impact performance, emphasizing careful design considerations in electrical engineering.

Impact on Computing and Telecommunication

In the fields of computing and telecommunication, the 2N2369 is integral to the core architecture that underpins data processing and transmission. Its contribution is important in optimizing power usage and increasing processing speeds, for next-generation computing advancements. Though the efficiency gains might seem modest individually, when applied across networks, they result in notable advancements, illustrating the extensive impact of detailed engineering enhancements.

Substitutes for the 2N2369 Transistor

• 2N2221

• 2N2222

• BC378

• BC378-6

• BC378-7

Alternatives of the 2N2369

Part	Compare	Manufacturers	Category	Description
JAN2N2369A	Current Part	Microsemi	BJTs	Trans GP BJT NPN 15V 360mW 3Pin TO-18
JANTX2N2369A	JAN2N2369A VS JANTX2N2369A	Microsemi	BJTs	Trans GP BJT NPN 15V 360mW 3Pin TO-18
JANS2N2369A	JAN2N2369A VS JANS2N2369A	Microsemi	BJTs	TO-18 NPN 15V
2N2369A	JAN2N2369A VS 2N2369ALEADFREE	Central Semiconductor		TO-18 NPN 15V 0.2A

Package Dimensions for 2N2369

2N2369 Manufacturer Information

Microsemi Corporation shines in developing sophisticated semiconductor and system solutions tailored for sectors such as aerospace, defense, communications, and data centers. Their innovative spirit is apparent in the intricacy of their high-performance integrated circuits (ICs), cutting-edge power management tools, and unparalleled secure networking solutions. Microsemi's emphasis on high-performance ICs underscores their commitment to satisfying the technical demands of contemporary electronics. These ICs form for systems needing accuracy and dependability, especially in aerospace and defense settings, where failure risks can be substantial. Enhancements in communication networks’ efficiencies and capabilities are also enabled by these high-performance ICs, highlighting ongoing efforts in innovation. Microsemi's power management solutions play an influential role in today’s energy-conscious landscape. Designed to maximize energy use, decrease inefficiencies, and sustain operational effectiveness, these tools resonate strongly within the data-heavy contexts of data centers. Serving as more than a technical necessity, effective power management offers a strategic advantage, resulting in reduced costs and promoting sustainable practices that are gaining importance in corporate planning.

Datasheet PDF

2N2222 Datasheets:

2N22(18-22) Datasheet.pdf