CY7C1512KV18-333BZI -

Manufacturer Part Number

CY7C1512KV18-333BZI

Manufacturer

Infineon Technologies

Introduction

The CY7C1512KV18-333BZI is a high-performance, low-power Quad Data Rate II (QDR II) SRAM memory device. It is designed for applications that require fast, synchronized memory access such as networking, telecommunications, and high-speed computing systems.

Product Features and Performance

72Mbit memory capacity

4M x 18 memory organization

Synchronous SRAM technology

QDR II interface

333MHz clock frequency

Parallel memory interface

7V to 1.9V operating voltage

-40°C to 85°C operating temperature range

165-LBGA package

Product Advantages

High-speed data access and throughput

Efficient, low-power operation

Reliable, stable performance

Wide operating temperature range

Key Reasons to Choose This Product

Excellent performance and power efficiency for demanding applications

Proven reliability and long-term availability

Seamless integration and compatibility with other system components

Backed by Infineon's industry-leading quality and technical support

Quality and Safety Features

Rigorous quality control and testing procedures

Compliance with relevant industry standards and regulations

Robust package design for reliable operation

Compatibility

Suitable for a wide range of networking, telecommunications, and high-speed computing applications

Application Areas

Networking equipment (routers, switches, etc.)

Telecommunications infrastructure (base stations, central offices, etc.)

High-performance computing systems (servers, workstations, etc.)

Industrial and embedded control systems

Product Lifecycle

["This product is currently active and in production.","Our website's sales team offers a range of alternative and equivalent SRAM products that can be considered, such as the CY7C1512KV18-250BZI and CY7C1512KV18-400BZI.","For more information or assistance in selecting the appropriate product, please contact our website's sales team."]