Manufacturer Part Number
CY7C1512V18-200BZXC
Manufacturer
Infineon Technologies
Introduction
High-speed synchronous Quad Data Rate II (QDR II) SRAM for demanding memory applications.
Product Features and Performance
72Mbit memory capacity
4M x 18 memory organization
Synchronous SRAM technology
Supports Quad Data Rate II architecture
Parallel memory interface
Maximum clock frequency of 200 MHz
Surface mount 165-LBGA package
Product Advantages
High performance for bandwidth-intensive applications
Optimized for high-speed data transmission
Reliable SRAM technology
Key Technical Parameters
Memory Type: Volatile SRAM
Technology: Synchronous, QDR II
Size: 72Mbit
Organization: 4M x 18
Interface: Parallel
Clock Frequency: 200 MHz
Supply Voltage: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C
Quality and Safety Features
Comprehensive data integrity and stability
Consistent performance across operating range
Compatibility
Designed for use in high-speed digital systems with standard parallel memory interface
Application Areas
Networking
High-performance computing
Telecommunications
Data storage systems
Product Lifecycle
Status: Obsolete
Potential for replacement or upgrade should be discussed with Infineon Technologies or checked for newer alternatives.
Several Key Reasons to Choose This Product
Optimal choice for systems requiring high-speed data access and high bandwidth
Solid reliability through Infineon's SRAM technology
Legacy product with potential long-term support for existing designs
Ideal for industrial and commercial applications within specified temperature range
High-speed operation up to 200 MHz enables performance-critical tasks