Manufacturer Part Number
CY7C1512KV18-300BZXI
Manufacturer
Infineon Technologies
Introduction
High-speed synchronous SRAM memory chip designed for high-performance computing and networking applications
Product Features and Performance
Volatile memory technology
Synchronous SRAM (QDR II)
72Mbit storage capacity
4M x 18 memory organization
300 MHz clock frequency
Parallel memory interface
Supports a wide range of operating temperatures
Product Advantages
Fast access times suitable for high-speed applications
High reliability and stability
Supports high-density system memory needs
Key Technical Parameters
72Mbit Memory Size
4M x 18 Memory Organization
300 MHz Clock Frequency
7V ~ 1.9V Voltage Supply
-40°C ~ 85°C Operating Temperature
165-LBGA Package/Case
165-FBGA Supplier Device Package
Quality and Safety Features
Designed to operate over an extended temperature range
Compliant with industry standards for quality and safety
Compatibility
Compatible with systems requiring synchronous SRAM memory
Easily interfaced with various microprocessors and digital signal processors
Application Areas
High-speed computing
Networking equipment
Telecommunication infrastructure
Industrial control systems
Product Lifecycle
Active status product
Not reported as nearing discontinuation
Replacements or upgrades may be available
Several Key Reasons to Choose This Product
High bandwidth and speed for intensive applications
Reliable performance under a range of environmental conditions
From a reputable manufacturer with a track record of quality products
Suitable for demanding professional applications requiring durable memory storage
Easy integration with existing and new systems
Good support and documentation available
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