Manufacturer Part Number
CY7C1512KV18-250BZC
Manufacturer
Infineon Technologies
Introduction
The CY7C1512KV18-250BZC is a high-speed CMOS synchronous SRAM (Static Random Access Memory) with a storage capacity of 72Mbit, specifically designed for high-throughput applications requiring a fast data access time.
Product Features and Performance
High-speed operation with clock frequencies up to 250 MHz
SRAM Synchronous, QDR II technology for rapid data access and throughput
72Mbit memory size for substantial data storage
Parallel memory interface for easy integration into system architectures
Operating temperature range from 0°C to 70°C, suitable for a variety of environments
Product Advantages
High clock frequency support enhances system performance by enabling quicker data processing and retrieval
Large memory size accommodates significant amounts of data, ideal for intensive applications
QDR II technology provides improvements in speed and reliability over previous generations
Compatible with a broad range of supply voltages (1.7V to 1.9V), offering flexibility in power-sensitive applications
Key Technical Parameters
Memory Type: Volatile
Memory Format: SRAM
Clock Frequency: 250 MHz
Memory Size: 72Mbit
Memory Organization: 4M x 18
Voltage Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Quality and Safety Features
Manufactured by Infineon Technologies, a leader in semiconductor solutions, ensuring high reliability and performance
Complies with standard industrial operating temperature ranges, making it suitable for a variety of applications
Compatibility
The Parallel memory interface ensures compatibility with a wide range of modern microcontrollers and processors
Mounting Type: Surface Mount, Package / Case: 165-LBGA, ensuring compatibility with standard PCB designs
Application Areas
Especially suited for applications requiring high-speed data transactions such as telecommunications, networking, and high-performance computing systems
Product Lifecycle
Status: Active, indicating that the product is currently in production and not near discontinuation
Availability of replacements or upgrades will depend on future technological advancements and market demand
Several Key Reasons to Choose This Product
High-speed performance and substantial memory capacity enhance system capabilities and allow for processing of large data sets efficiently
Built on reliable SRAM technology and backed by Infineon’s reputation for quality, ensuring long-term performance
Flexibility in application due to wide operating temperature range and compatibility with various supply voltages
Ideal for designs requiring rapid access to large amounts of data, enhancing the performance of high-speed computing and telecommunications systems