Manufacturer Part Number
TP0610K-T1
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
P-Channel MOSFET Transistor
Product Features and Performance
Low on-resistance
Fast switching speed
High input impedance
Suitable for power conversion and switching applications
Product Advantages
Compact SOT-23-3 (TO-236) package
Wide operating temperature range (-55°C to 150°C)
Low gate charge for efficient switching
Rugged and reliable design
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs) Max: ±20V
On-Resistance (Rds(on)): 6Ω @ 500mA, 10V
Continuous Drain Current (Id): 185mA @ 25°C
Input Capacitance (Ciss): 23pF @ 25V
Power Dissipation (Max): 350mW
Quality and Safety Features
RoHS3 compliant
Supported by Vishay/Siliconix's quality and reliability standards
Compatibility
Suitable for surface mount applications
Compatible with standard IC assembly and testing processes
Application Areas
Power conversion and switching circuits
Amplifier and driver circuits
General-purpose electronic applications
Product Lifecycle
This product is an active and widely available MOSFET transistor from Vishay/Siliconix.
Replacement or upgrade options are readily available from the manufacturer.
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance, fast switching, and high input impedance.
Compact and reliable SOT-23-3 (TO-236) package suitable for space-constrained applications.
Wide operating temperature range and RoHS3 compliance for broad usage scenarios.
Backed by Vishay/Siliconix's reputation for quality and reliability in discrete semiconductor products.
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