TP0610T-G - Microchip Technology

Manufacturer Part Number

TP0610T-G

Manufacturer

Microchip Technology

Introduction

P-channel MOSFET transistor

Designed for a wide range of power management and control applications

Product Features and Performance

60V Drain-to-Source Voltage (Vdss)

120mA Continuous Drain Current (Id) at 25°C

10Ω Typical On-Resistance (Rds(on)) at 200mA, 10V

60pF Input Capacitance (Ciss) at 25V

Operating Temperature Range: -55°C to 150°C

Product Advantages

Compact SOT-23 surface mount package

Suitable for power management and control applications

Excellent thermal performance

Key Technical Parameters

MOSFET Technology

P-Channel FET Type

60V Drain-to-Source Voltage (Vdss)

±20V Gate-to-Source Voltage (Vgs)

4V Gate Threshold Voltage (Vgs(th)) at 1mA

Quality and Safety Features

RoHS3 Compliant

Reliable performance and long lifespan

Compatibility

Widely compatible with various power management and control circuits

Application Areas

Power management circuits

Load switching

Motor control

General purpose power control

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent performance characteristics, including low on-resistance and high drain current

Compact surface mount package for space-constrained designs

Reliable operation over a wide temperature range

Suitable for a variety of power management and control applications