TP0610K-T1-E3 - Vishay Siliconix

Manufacturer Part Number

TP0610K-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

A discrete P-channel MOSFET transistor with low on-state resistance and high power density, suitable for power management, switching, and control applications.

Product Features and Performance

Low on-state resistance (R_DS(on) up to 6 Ohm @ 500 mA, 10V)

High drain-source voltage rating (V_DS up to 60V)

Low gate-source voltage rating (V_GS up to ±20V)

Low input capacitance (C_ISS up to 23 pF @ 25V)

High current handling capability (I_D up to 185 mA @ 25°C)

Wide operating temperature range (-55°C to 150°C)

Product Advantages

Efficient power conversion and control

Compact design with surface mount package

Reliable performance in harsh environments

Key Technical Parameters

Drain-Source Voltage (V_DS): 60V

Gate-Source Voltage (V_GS): ±20V

On-State Resistance (R_DS(on)): 6 Ohm @ 500 mA, 10V

Drain Current (I_D): 185 mA @ 25°C

Input Capacitance (C_ISS): 23 pF @ 25V

Power Dissipation (P_D): 350 mW @ 25°C

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Compatible with various power management, switching, and control circuit designs

Application Areas

Power supplies

Motor drives

Battery chargers

LED drivers

General power management and control applications

Product Lifecycle

The TP0610K-T1-E3 is an active product with no plans for discontinuation.

Replacement or upgrade options may be available, consult Vishay/Siliconix for the latest information.

Key Reasons to Choose This Product

Excellent power efficiency and low on-state resistance

Compact surface mount package for space-constrained designs

Wide operating temperature range for reliability in harsh environments

RoHS3 compliance for environmentally-friendly applications

Proven performance and reliability from a leading semiconductor manufacturer