TP0606N3-G - Microchip Technology

Manufacturer Part Number

TP0606N3-G

Manufacturer

Microchip Technology

Introduction

The TP0606N3-G is a P-channel MOSFET transistor from Microchip Technology, designed for a variety of electronic applications.

Product Features and Performance

Drain to Source Voltage (Vdss) of 60V

Vgs (Max) of ±20V

Low On-Resistance (Rds On) of 3.5Ω @ 750mA, 10V

Continuous Drain Current (Id) of 320mA @ 25°C

Input Capacitance (Ciss) of 150pF @ 25V

Power Dissipation (Max) of 1W

Product Advantages

Suitable for medium-power switching and amplification applications

Robust design with high voltage and current capability

Low on-resistance for efficient power conversion

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology

P-channel configuration

Threshold Voltage (Vgs(th)) of 2.4V @ 1mA

Drive Voltage range of 5V to 10V

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Through-hole mounting in TO-92-3 package

Suitable for a variety of electronic circuits and applications

Application Areas

Power supplies

Motor controls

Lighting and LED drivers

General-purpose switching and amplification

Product Lifecycle

This product is currently available and not nearing discontinuation

Replacement or upgraded models may become available in the future

Key Reasons to Choose This Product

Proven MOSFET technology for reliable performance

Wide voltage and temperature operating range

Low on-resistance for efficient power handling

Versatile through-hole package for easy integration

Compliance with RoHS regulations for environmental responsibility