Manufacturer Part Number
TP0606N3-G
Manufacturer
Microchip Technology
Introduction
The TP0606N3-G is a P-channel MOSFET transistor from Microchip Technology, designed for a variety of electronic applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 60V
Vgs (Max) of ±20V
Low On-Resistance (Rds On) of 3.5Ω @ 750mA, 10V
Continuous Drain Current (Id) of 320mA @ 25°C
Input Capacitance (Ciss) of 150pF @ 25V
Power Dissipation (Max) of 1W
Product Advantages
Suitable for medium-power switching and amplification applications
Robust design with high voltage and current capability
Low on-resistance for efficient power conversion
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology
P-channel configuration
Threshold Voltage (Vgs(th)) of 2.4V @ 1mA
Drive Voltage range of 5V to 10V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole mounting in TO-92-3 package
Suitable for a variety of electronic circuits and applications
Application Areas
Power supplies
Motor controls
Lighting and LED drivers
General-purpose switching and amplification
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Proven MOSFET technology for reliable performance
Wide voltage and temperature operating range
Low on-resistance for efficient power handling
Versatile through-hole package for easy integration
Compliance with RoHS regulations for environmental responsibility
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