Manufacturer Part Number
SUD50P10-43L-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel power MOSFET with enhanced ruggedness and efficiency
Product Features and Performance
Trench MOSFET technology for low on-resistance and high switching speed
Wide operating temperature range of -55°C to 175°C
High current capability up to 37.1A (at 25°C case temperature)
Low on-resistance of 43mΩ (maximum)
Low gate charge of 160nC (maximum)
High drain-to-source breakdown voltage of 100V
Product Advantages
Enhanced ruggedness and reliability
Efficient power conversion
Suitable for high-current, high-voltage applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 43mΩ (maximum)
Continuous Drain Current (Id): 37.1A (at 25°C case temperature)
Input Capacitance (Ciss): 4600pF (maximum)
Power Dissipation: 8.3W (at 25°C ambient temperature), 136W (at 25°C case temperature)
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount assembly
Compatibility
TO-252 (DPAK) package
Application Areas
Power supplies
Motor drives
Switching regulators
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent performance and efficiency due to Trench MOSFET technology
Wide operating temperature range and high current capability
Low on-resistance and gate charge for improved power conversion
Rugged and reliable design suitable for demanding applications
Compatibility with standard surface mount assembly processes
SUD70N03-04PElectro-Films (EFI) / Vishay