Manufacturer Part Number
SUD50P08-25L-E3
Manufacturer
Vishay / Siliconix
Introduction
This is a high-performance P-channel MOSFET transistor from Vishay/Siliconix, designed for a wide range of power management and control applications.
Product Features and Performance
80V drain-to-source voltage rating
Extremely low on-resistance of 25.2 mOhm @ 12.5A, 10V
Capable of handling up to 50A continuous drain current (at 25°C)
Fast switching with low gate charge of 160 nC @ 10V
Wide operating temperature range of -55°C to 175°C
Compact and rugged TO-252AA package
Product Advantages
Excellent power efficiency due to low on-resistance
High current handling capability
Reliable operation across wide temperature range
Compact size for space-constrained designs
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 25.2 mOhm @ 12.5A, 10V
Continuous Drain Current (Id): 50A (at 25°C)
Input Capacitance (Ciss): 4700 pF @ 40V
Power Dissipation: 8.3W (at 25°C), 136W (at case temperature)
Quality and Safety Features
RoHS3 compliant
Manufactured using Vishay's advanced TrenchFET technology
Compatibility
Compatible with various power management and control applications
Application Areas
Power supplies
Motor drives
Inverters
Battery management systems
Industrial and automotive electronics
Product Lifecycle
This product is currently in active production
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Exceptional power efficiency and low power losses due to ultra-low on-resistance
High current handling capability for demanding applications
Reliable operation across wide temperature range
Compact size and surface-mount packaging for space-constrained designs
RoHS3 compliance for environmentally-friendly applications
SUD50P06-15Electro-Films (EFI) / Vishay