Manufacturer Part Number
SUD70090E-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-Channel MOSFET with low on-resistance and high current capability.
Product Features and Performance
100V drain-source voltage
50A continuous drain current at 25°C
9mΩ maximum on-resistance at 20A, 10V
Wide operating temperature range: -55°C to 175°C
Low input capacitance of 1950pF at 50V
High power dissipation of 125W at 25°C
Product Advantages
Excellent efficiency and thermal performance
Suitable for high-power switching and amplifier applications
Compact and easy-to-mount TO-252 package
Key Technical Parameters
N-Channel MOSFET
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 8.9mΩ @ 20A, 10V
Drain Current (Id): 50A @ 25°C
Input Capacitance (Ciss): 1950pF @ 50V
Power Dissipation: 125W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Suitable for a wide range of high-power switching and amplifier applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial controls
Automotive electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available
Several Key Reasons to Choose This Product
Exceptional efficiency and thermal performance
High current capability and low on-resistance
Compact and easy-to-mount packaging
Wide operating temperature range
Suitable for a variety of high-power applications
RoHS3 compliance for environmental safety
SUD50P10-43L-GE3 MOSElectro-Films (EFI) / Vishay