Manufacturer Part Number
SUD50P10-43L-E3
Manufacturer
Vishay / Siliconix
Introduction
This is a P-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) from Vishay/Siliconix's TrenchFET series.
Product Features and Performance
100V Drain to Source Voltage
43mΩ On-State Resistance
1A Continuous Drain Current
Wide Operating Temperature Range: -55°C to 175°C
Low Input Capacitance of 4600pF
High Power Dissipation of 8.3W (Ta) and 136W (Tc)
Product Advantages
Excellent power handling and efficiency
Compact surface mount package
Suitable for a wide range of applications
Key Technical Parameters
Vdss: 100V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 43mΩ @ 9.2A, 10V
Id (Continuous) @ 25°C: 37.1A (Tc)
Ciss (Max) @ Vds: 4600pF @ 50V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Suitable for harsh environments
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 package
Tape & Reel (TR) packaging
Application Areas
Power management circuits
Motor control
Switching power supplies
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and widely available.
Replacements and upgrades may be available from Vishay/Siliconix or other MOSFET manufacturers.
Several Key Reasons to Choose This Product
Excellent power handling and efficiency
Compact surface mount package
Wide operating temperature range
Low on-state resistance for improved efficiency
Suitable for a variety of power electronics applications
SUD50P10-43L-GE3 MOSElectro-Films (EFI) / Vishay