Manufacturer Part Number
SIS414DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET in a PowerPAK 1212-8 package
Product Features and Performance
Superjunction MOSFET technology
Low on-resistance of 16 mΩ @ 10 A, 4.5 V
High current capability of 20 A continuous drain current at 25°C
High-frequency capability
Fast switching
Low gate charge of 33 nC @ 10 V
Product Advantages
Excellent thermal performance
Compact and space-saving package
Improved power density
High efficiency
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Gate-to-Source Voltage (Vgs): ±12 V
On-Resistance (Rds(on)): 16 mΩ @ 10 A, 4.5 V
Continuous Drain Current (Id): 20 A @ 25°C
Input Capacitance (Ciss): 795 pF @ 15 V
Power Dissipation (Pd): 3.4 W @ Ta, 31 W @ Tc
Gate Charge (Qg): 33 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Compatible with various electronic systems and applications
Application Areas
Switching power supplies
DC/DC converters
Class-D audio amplifiers
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current product
No discontinuation planned
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Compact and space-saving package
High current capability and fast switching
Reliable and durable design
Broad compatibility and suitability for various applications