Manufacturer Part Number
SIS412DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SIS412DN-T1-GE3 is a discrete semiconductor product, specifically a N-Channel MOSFET transistor.
Product Features and Performance
Operating temperature range: -55°C to 150°C (TJ)
Drain to Source Voltage (Vdss): 30V
Maximum Gate-Source Voltage (Vgs): ±20V
Maximum On-Resistance (Rds(on)): 24mΩ @ 7.8A, 10V
Continuous Drain Current (Id): 12A @ 25°C (Tc)
Input Capacitance (Ciss): 435pF @ 15V
Maximum Power Dissipation: 3.2W (Ta), 15.6W (Tc)
Gate Charge (Qg): 12nC @ 10V
Product Advantages
Low on-resistance for improved efficiency
Wide operating temperature range
Compact PowerPAK 1212-8 package
Key Technical Parameters
MOSFET Technology: Trench
FET Type: N-Channel
Threshold Voltage (Vgs(th)): 2.5V @ 250μA
Drive Voltage (Rds(on) Max, Rds(on) Min): 4.5V, 10V
Quality and Safety Features
RoHS3 compliant
Compatibility
Compatible with a variety of electronic circuit designs requiring a high-performance N-Channel MOSFET
Application Areas
Suitable for use in power management, switching, and control applications in consumer electronics, industrial equipment, and other electronic systems.
Product Lifecycle
This product is an active and widely available MOSFET solution from Vishay/Siliconix.
Key Reasons to Choose This Product
Excellent on-resistance performance for improved efficiency
Wide operating temperature range for use in demanding environments
Compact and space-saving PowerPAK 1212-8 package
Proven reliability and quality from a leading semiconductor manufacturer