Manufacturer Part Number
SIS407DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product, Single Transistor - MOSFET, P-Channel
Product Features and Performance
TrenchFET Series
PowerPAK 1212-8 Package
20V Drain to Source Voltage
Max ±8V Gate to Source Voltage
5mOhm Rds(on) @ 15.3A, 4.5V
25A Continuous Drain Current @ 25°C
2760pF Input Capacitance @ 10V
6W Power Dissipation @ Ta, 33W @ Tc
1V Vgs(th) @ 250A
8nC Gate Charge @ 8V
Product Advantages
Low on-resistance
High current capability
Small form factor
Efficient thermal performance
Key Technical Parameters
Voltage Rating: Vdss 20V
On-state Resistance: Rds(on) 9.5mOhm
Drain Current: Id 25A
Input Capacitance: Ciss 2760pF
Power Dissipation: 3.6W (Ta), 33W (Tc)
Quality and Safety Features
ROHS3 Compliant
Operating Temperature: -55°C to 150°C
Compatibility
Surface Mount, Tape & Reel Packaging
Application Areas
Power Management
Motor Control
Switching Circuits
General Purpose Power Switching
Product Lifecycle
Current and available, no discontinuation planned
Key Reasons to Choose
Low on-resistance for high efficiency
High current capacity
Small size for compact designs
Reliable thermal performance
Suitable for a wide range of power applications
SIS412DN-T1-GE3 MOSElectro-Films (EFI) / Vishay