Manufacturer Part Number
SIS406DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel TrenchFET MOSFET, designed for high-frequency, high-power applications.
Product Features and Performance
Low on-resistance for high efficiency
High current handling capability
High switching speed
Wide operating temperature range (-55°C to 150°C)
Low gate charge for fast switching
Product Advantages
Optimized for high-frequency, high-power applications
Efficient power conversion
Reliable performance across a wide temperature range
Fast switching capability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Gate-to-Source Voltage (Vgs): ±25 V
On-Resistance (Rds(on)): 11 mΩ @ 12 A, 10 V
Continuous Drain Current (Id): 9 A @ 25°C
Input Capacitance (Ciss): 1100 pF @ 15 V
Power Dissipation (Pd): 1.5 W @ 25°C
Quality and Safety Features
RoHS3 compliant
Reliable design and manufacturing process
Designed for safe and efficient operation
Compatibility
Surface mount package (PowerPAK 1212-8)
Compatible with high-frequency, high-power applications
Application Areas
Switching power supplies
Motor drives
Telecommunications equipment
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacements and upgrades may be available in the future.
Several Key Reasons to Choose This Product
High efficiency and power handling capability
Fast switching speed for high-frequency applications
Wide operating temperature range for reliable performance
Compact and easy-to-use surface mount package
Proven quality and reliability from a trusted manufacturer
SIS332DNElectro-Films (EFI) / Vishay