Manufacturer Part Number
SIS413DN-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
ROHS3 Compliant
PowerPAK 1212-8 Package
TrenchFET Series
Tape & Reel Packaging
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
Low On-Resistance (Rds(on))
High Continuous Drain Current (Id)
Low Input Capacitance (Ciss)
High Power Dissipation
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs) Maximum: ±20V
Rds(on) Maximum @ Id, Vgs: 9.4mΩ @ 15A, 10V
MOSFET Technology
Continuous Drain Current (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) Maximum @ Vds: 4280pF @ 15V
Power Dissipation Maximum: 3.7W (Ta), 52W (Tc)
P-Channel FET Type
Vgs(th) Maximum @ Id: 2.5V @ 250A
Drive Voltage (Maximum Rds(on), Minimum Rds(on)): 4.5V, 10V
Gate Charge (Qg) Maximum @ Vgs: 110nC @ 10V
Quality and Safety Features
ROHS3 Compliant
Compatibility
Surface Mount Mounting Type
Application Areas
Broad range of power management applications
Product Lifecycle
Current product, no plans for discontinuation
Key Reasons to Choose This Product
Low on-resistance for high efficiency
High continuous drain current capability
Low input capacitance for fast switching
High power dissipation for compact designs
Wide operating temperature range for versatility
Surface mount packaging for easy integration