Manufacturer Part Number
SIR462DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Designed for power switching applications
Product Features and Performance
High-performance MOSFET with low on-resistance
Suitable for high-frequency and high-power applications
Excellent thermal management with PowerPAK SO-8 package
Low gate charge for efficient switching
Product Advantages
Excellent power efficiency
Reliable and rugged design
Compact and space-saving package
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 7.9 mΩ @ 20 A, 10 V
Continuous Drain Current (Id) @ 25°C: 30 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Power Dissipation (Max): 4.8 W (Ta), 41.7 W (Tc)
Vgs(th) (Max) @ Id: 3 V @ 250 A
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Reliable and durable design
Compatibility
Suitable for a wide range of power switching applications
Application Areas
Switching power supplies
Motor drives
Industrial and automotive electronics
Power amplifiers
Product Lifecycle
Current production model
Replacement or upgrade options available
Several Key Reasons to Choose This Product
Excellent power efficiency and thermal management
Reliable and rugged design for demanding applications
Compact and space-saving package
Suitable for high-frequency and high-power applications
Competitive pricing and availability