Manufacturer Part Number
SIR464DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
N-Channel
TrenchFET series
PowerPAK SO-8 package
Drain-Source Voltage (Vdss) of 30V
Gate-Source Voltage (Vgs) range of ±20V
On-Resistance (Rds(on)) of 3.1mΩ @ 15A, 10V
Continuous Drain Current (Id) of 50A at 25°C
Input Capacitance (Ciss) of 3545pF @ 15V
Power Dissipation of 5.2W (Ta) and 69W (Tc)
Gate Charge (Qg) of 95nC @ 10V
Product Advantages
Compact PowerPAK SO-8 surface mount package
High current capability
Low on-resistance for improved efficiency
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs) range: ±20V
On-Resistance (Rds(on)): 3.1mΩ @ 15A, 10V
Continuous Drain Current (Id): 50A @ 25°C
Input Capacitance (Ciss): 3545pF @ 15V
Power Dissipation: 5.2W (Ta), 69W (Tc)
Gate Charge (Qg): 95nC @ 10V
Quality and Safety Features
RoHS3 compliant
Wide operating temperature range of -55°C to 150°C
Compatibility
Surface mount (SMD) compatible
Suitable for a variety of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial automation
Automotive electronics
Product Lifecycle
Current production model
Replacement or upgrade options may be available in the future
Several Key Reasons to Choose This Product
High current capability up to 50A
Excellent on-resistance performance for improved efficiency
Compact and thermally efficient PowerPAK SO-8 package
Wide operating temperature range for diverse applications
RoHS3 compliance for environmental sustainability
SIR460DP-T1-E3Electro-Films (EFI) / Vishay