Manufacturer Part Number
SIR460DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
N-Channel MOSFET
30V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
7mOhm Rds On @ 15A, 10V
40A Continuous Drain Current (Id) @ 25°C
2071pF Input Capacitance (Ciss) @ 15V
5W Power Dissipation (Ta), 48W (Tc)
54nC Gate Charge (Qg) @ 10V
Product Advantages
High current handling capability
Low on-resistance
Compact PowerPAK SO-8 package
Wide operating temperature range (-55°C to 150°C)
Key Technical Parameters
MOSFET Technology
Vgs(th) Max: 2.4V @ 250A
Drive Voltage: 4.5V (Max Rds On), 10V (Min Rds On)
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
PowerPAK SO-8 package
Application Areas
Suitable for various power management and control applications
Product Lifecycle
Current product, no discontinuation plans
Key Reasons to Choose
Excellent power handling and efficiency
Compact and thermally efficient package
Wide temperature range for versatile applications
Proven reliability and performance from Vishay/Siliconix