Manufacturer Part Number
SIR440DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel enhancement-mode power MOSFET designed for high-frequency, high-current switching applications
Product Features and Performance
Trench technology for low on-resistance
Low gate charge for high-frequency switching
High-current capability up to 60A continuous drain current
Low power dissipation up to 6.25W (at 25°C ambient) or 104W (at 25°C case)
Wide operating temperature range from -55°C to 150°C
Product Advantages
Excellent thermal management
High efficiency
High reliability
Suitable for high-frequency applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs) Max: ±20V
On-Resistance (Rds(on)) Max: 1.55mΩ @ 20A, 10V
Continuous Drain Current (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) Max: 6000pF @ 10V
Gate Charge (Qg) Max: 150nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount (PowerPAK SO-8 package)
Suitable for high-frequency, high-current switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades available
Several Key Reasons to Choose This Product
Excellent thermal management and high efficiency for high-performance applications
Wide operating temperature range and high reliability
Suitable for high-frequency, high-current switching applications
Easy to integrate with surface mount design