SIB455EDK-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIB455EDK-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-channel enhancement-mode power MOSFET in PowerPAK SC-75-6 package

Product Features and Performance

Optimized for switching and linear applications

Low on-resistance for low conduction losses

Fast switching speed

Low gate charge for high efficiency

High power density

Product Advantages

High efficiency

Low power consumption

Compact size

Reliable performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 12 V

Vgs (Max): ±10V

Rds On (Max) @ Id, Vgs: 27mOhm @ 5.6A, 4.5V

Current Continuous Drain (Id) @ 25°C: 9A (Tc)

Power Dissipation (Max): 2.4W (Ta), 13W (Tc)

Vgs(th) (Max) @ Id: 1V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V

Quality and Safety Features

RoHS3 Compliant

Reliable performance in wide temperature range (-55°C ~ 150°C)

Compatibility

Surface mount package (PowerPAK SC-75-6)

Application Areas

Switching power supplies

Motor drivers

DC-DC converters

White goods

Industrial control

Product Lifecycle

Current production

Replacements and upgrades available

Key Reasons to Choose This Product

High efficiency and low power consumption

Compact size and high power density

Reliable performance in wide temperature range

Optimized for switching and linear applications

Fast switching speed and low gate charge for high efficiency