Manufacturer Part Number
SIB455EDK-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel enhancement-mode power MOSFET in PowerPAK SC-75-6 package
Product Features and Performance
Optimized for switching and linear applications
Low on-resistance for low conduction losses
Fast switching speed
Low gate charge for high efficiency
High power density
Product Advantages
High efficiency
Low power consumption
Compact size
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.6A, 4.5V
Current Continuous Drain (Id) @ 25°C: 9A (Tc)
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Quality and Safety Features
RoHS3 Compliant
Reliable performance in wide temperature range (-55°C ~ 150°C)
Compatibility
Surface mount package (PowerPAK SC-75-6)
Application Areas
Switching power supplies
Motor drivers
DC-DC converters
White goods
Industrial control
Product Lifecycle
Current production
Replacements and upgrades available
Key Reasons to Choose This Product
High efficiency and low power consumption
Compact size and high power density
Reliable performance in wide temperature range
Optimized for switching and linear applications
Fast switching speed and low gate charge for high efficiency
SIB422EDKElectro-Films (EFI) / Vishay