Manufacturer Part Number
SIB441EDK-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel MOSFET for power management applications
Product Features and Performance
Trench MOSFET technology
Low on-resistance (25.5 mOhm max. @ 4 A, 4.5 V)
High drain current capability (9 A @ 25°C)
Low gate charge (33 nC max. @ 8 V)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Efficient power management
Compact surface-mount package
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (VDS): 12 V
Gate-to-Source Voltage (VGS): ±8 V
Input Capacitance (Ciss): 1180 pF max. @ 6 V
Power Dissipation: 2.4 W (Ta), 13 W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for professional and industrial applications
Compatibility
Directly compatible with various power management circuits
Application Areas
Power management in consumer electronics
Motor control
Industrial automation
Power supplies
Product Lifecycle
Current product, no discontinuation plans
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
Reliable performance over a wide temperature range
Compact and easy-to-integrate surface-mount package
Proven Trench MOSFET technology for reliable operation
Comprehensive protection features for safe operation