SIB422EDK-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIB422EDK-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SIB422EDK-T1-GE3 is a Discrete Semiconductor Product, specifically a Transistor - FET, MOSFET - Single.

Product Features and Performance

ROHS3 Compliant

PowerPAK SC-75-6 Packaging

TrenchFET Series

Tape & Reel (TR) Package

Operating Temperature Range: -55°C to 150°C (TJ)

Drain to Source Voltage (Vdss): 20V

Maximum Gate-Source Voltage (Vgs): ±8V

Maximum On-Resistance (Rds On): 30mOhm @ 5A, 4.5V

MOSFET (Metal Oxide) Technology

Continuous Drain Current (Id): 9A (Tc)

Maximum Power Dissipation: 2.5W (Ta), 13W (Tc)

N-Channel FET Type

Maximum Gate Threshold Voltage (Vgs(th)): 1V @ 250A

Drive Voltage Range: 1.5V (Max Rds On), 4.5V (Min Rds On)

Maximum Gate Charge (Qg): 18 nC @ 8V

Surface Mount Mounting Type

Product Advantages

High performance and efficiency

Compact and space-saving design

Wide operating temperature range

Excellent thermal management

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Maximum Gate-Source Voltage (Vgs): ±8V

Maximum On-Resistance (Rds On): 30mOhm

Continuous Drain Current (Id): 9A

Maximum Power Dissipation: 13W

Quality and Safety Features

ROHS3 Compliant

Reliable and durable construction

Compatibility

Suitable for a wide range of electronic and electrical applications

Application Areas

Power management

Motor control

Switching circuits

Industrial and consumer electronics

Product Lifecycle

Current product offering

Replacements and upgrades may be available

Key Reasons to Choose

High performance and efficiency

Compact and space-saving design

Wide operating temperature range

Excellent thermal management

Reliable and durable construction

Suitable for a wide range of applications