SIB452DK-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIB452DK-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel TrenchFET Power MOSFET

Product Features and Performance

Low on-resistance up to 2.4 Ohm

High voltage capability up to 190 V

Low gate charge and input capacitance

Suitable for high-frequency switching applications

Withstands high operating temperatures up to 150°C

Product Advantages

Improved power efficiency

Reduced switching losses

Compact and space-saving design

Reliable performance in harsh environments

Key Technical Parameters

Drain to Source Voltage (Vdss): 190 V

Gate-to-Source Voltage (Vgs): ±16 V

On-Resistance (Rds(on)): 2.4 Ohm @ 500 mA, 4.5 V

Continuous Drain Current (Id): 1.5 A @ 25°C

Input Capacitance (Ciss): 135 pF @ 50 V

Power Dissipation: 2.4 W (Ta), 13 W (Tc)

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified

Reliable and robust design

Compatibility

Suitable for a wide range of power electronics applications

Application Areas

Switched-mode power supplies

Motor drives

Inverters

Converters

Industrial and consumer electronics

Product Lifecycle

Current product, no indication of discontinuation

Replacements and upgrades available as technology evolves

Key Reasons to Choose This Product

Excellent power efficiency and low switching losses

Compact and space-saving design

Reliable performance in harsh environments

Wide operating temperature range

Compatibility with a variety of power electronics applications