Manufacturer Part Number
SI7923DN-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
RoHS3 Compliant
PowerPAK 1212-8 Dual Packaging
TrenchFET Series
-55°C to 150°C Operating Temperature
3W Maximum Power
2 P-Channel (Dual) Configuration
30V Drain to Source Voltage (Vdss)
47mOhm Maximum Rds On @ 6.4A, 10V
MOSFET (Metal Oxide) Technology
3A Continuous Drain Current (Id) @ 25°C
Logic Level Gate FET Feature
3V Maximum Vgs(th) @ 250A
21nC Maximum Gate Charge (Qg) @ 10V
Surface Mount Mounting Type
Product Advantages
RoHS3 Compliance
Dual P-Channel Configuration
Wide Operating Temperature Range
Low On-Resistance
High Current Capability
Logic Level Gate
Key Technical Parameters
Manufacturer Part Number: SI7923DN-T1-E3
Packaging: PowerPAK 1212-8 Dual
Series: TrenchFET
Package: Tape & Reel (TR)
Configuration: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Current Continuous Drain (Id) @ 25°C: 4.3A
Vgs(th) (Max) @ Id: 3V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Wide Operating Temperature Range (-55°C to 150°C)
Compatibility
Compatible with various electronic circuits and systems that require discrete semiconductor devices
Application Areas
Suitable for a wide range of electronic applications that require high-performance, low on-resistance p-channel MOSFETs
Product Lifecycle
Currently available, no information on discontinuation or replacement
Key Reasons to Choose This Product
RoHS3 compliance for environmental sustainability
Dual p-channel configuration for flexibility and redundancy
Wide operating temperature range for versatile use cases
Low on-resistance for efficient power handling
High current capability for demanding applications
Logic level gate for easy interface with control circuits
SI7938DP-T1-GE3 MOSElectro-Films (EFI) / Vishay